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A simplified density functional theory method for charged adsorbates on an ultrathin, insulating film supported by a metal substrate

机译:一种简化的带电吸附物密度泛函理论方法   由金属基板支撑的超薄绝缘膜

摘要

A simplified density functional theory (DFT) method for charged adsorbates onan ultrathin, insulating film supported by a metal substrate is developed andpresented. This new method is based on a previous DFT development that uses aperfect conductor (PC) model to approximate the electrostatic response of themetal substrate, while the film and the adsorbate are both treated fully withinDFT [I. Scivetti and M. Persson, Journal of Physics: Condensed Matter 25,355006 (2013)]. The missing interactions between the metal substrate and theinsulating film in the PC approximation are modelled by a simple force field(FF). The parameters of the PC model and the force field are obtained from DFTcalculations of the film and the substrate, here shown explicitly for a NaClbilayer supported by a Cu(100) surface. In order to obtain some of theseparameters and the polarisability of the force field, we have to include anexternal, uniformly charged plane in the DFT calculations, which has requiredthe development of a periodic DFT formalism to include such a charged plane inthe presence of a metal substrate. This extension and implementation should beof more general interest and applicable to other challenging problems, forinstance, in electrochemistry. As illustrated for the gold atom on the NaClbilayer supported by a Cu(100) surface, our new DFT-PC-FF method allows us tohandle different charge states of adsorbates in a controlled and accuratemanner with a considerable reduction of the computational time. In addition, itis now possible to calculate vertical transition and reorganisation energiesfor charging and discharging of adsorbates that cannot be obtained by currentDFT methodologies that include the metal substrate. We find that the computedvertical transition energy for charging of the gold adatom is in good agreementwith experiments.
机译:提出并提出了一种简化的密度泛函理论(DFT)方法,用于在金属基板支撑的超薄绝缘膜上带电吸附物。这种新方法基于先前的DFT开发,该开发使用完美导体(PC)模型来近似金属基材的静电响应,而薄膜和被吸附物都在DFT中完全处理。 Scivetti和M. Persson,物理学杂志:凝聚态25,355006(2013)]。通过简单的力场(FF)对PC近似中金属基板和绝缘膜之间缺少的相互作用进行建模。 PC模型的参数和力场是从薄膜和基材的DFT计算获得的,此处明确显示了由Cu(100)表面支撑的NaCl双分子层。为了获得这些参数和力场的极化率,我们必须在DFT计算中包括一个外部,均匀带电的平面,这需要发展周期性的DFT形式,以在存在金属基板的情况下包括这种带电的平面。这种扩展和实施应引起更多的普遍兴趣,并适用于其他挑战性的问题,例如电化学。如图所示,由Cu(100)表面支撑的NaCl双分子层上的金原子,我们的新DFT-PC-FF方法使我们能够以可控且精确的方式处理吸附物的不同电荷状态,从而大大减少了计算时间。另外,现在可以计算用于吸附物的充电和放电的垂直转变和重组能量,这不能通过包括金属衬底的当前DFT方法获得。我们发现计算得到的用于吸附金原子的垂直跃迁能与实验吻合良好。

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  • 作者

    Scivetti, Ivan; Persson, Mats;

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  • 年度 2013
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  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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